Gennaro Gelao, Roberto Marani and Anna Gina Perri Pages 61 - 68 ( 8 )
This paper presents a comparison of temperature dependence of I-V characteristics in Carbon Nanotube Field Effect Transistors (CNTFETs) models proposed in the literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with two other models: the numerical FETToy model and the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), obtaining I-V characteristics comparable with those of two examined models, but with CPU calculation times much lower.
CNTFET, modelling, device simulation, I-V characteristics, temperature effects, verilog-A, computer aided design.
Department of Electrical and Information Engineering, Polytechnic University of Bari, Italy.